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2450A M68000UM L8022 2160B IRHNA 20101 16F505 BA6871BS
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 BB 814
Silicon Variable Capacitance Diode
q q q q
BB 814
For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching available
Type BB 814
Ordering Code Pin Configuration (tape and reel) Q62702-B404
Marking SH (see Characteristics for marking of capacitance subgroups)
Package SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current, TA 60 C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
Symbol VR VRM IF Top Tstg
Values 18 20 50 - 55 ... + 150
Unit V mA
- 55 ... + 125 C
600
K/W
Semiconductor Group
1
10.94
BB 814
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 60 C Diode capacitance f = 1 MHz1) VR = 2 V VR = 8 V Capacitance ratio VR = 2 V, 8 V, f = 1 MHz Capacitance matching VR = 2 V, 8 V Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz
1)
Values typ. max.
Unit
IR - - CT 43 19.1 CT2 CT8
CT
nA - - 20 200 pF 44.75 20.8 2.15 - 0.18 200 46.5 22.7 2.25 3 - - - % -
2.05 - - -
C T rS Q
Capacitance groups, coded 1, 2 CT (2 V) 43 44.5 ... 45 ... 46.5 CT (8 V) Unit pF
Code 1 2
19.1 ... 21.95 pF 19.75 ... 22.7
Semiconductor Group
2
BB 814
Diode capacitance CT = f (VR) per diode, f = 1 MHz
Capacitance ratio CTref/CT = f (VR) per diode, Vref = 1 V, 2 V, 3 V, f = 1 MHz
Semiconductor Group
3


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